RJP020N06T100
N-CHANNEL 60V 2A (TA) 500MW (TA) SURFACE MOUNT MPT3Call for availability
Manufactured by:
Mfr Part#: RJP020N06T100
PACKAGE / CASE: TO-243AA
PACKAGING: REEL
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: MPT3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2A (TA)
DETAILED DESCRIPTION: N-CHANNEL 60V 2A (TA) 500MW (TA) SURFACE MOUNT MPT3
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOMPT3 CONSTITUTION MATERIAL LISTRJP020N06 ESD DATA
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 4V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 160PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RJP020N06T100
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: TO-243AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 500MW (TA)
RDS ON (MAX) @ ID, VGS: 240 MOHM @ 2A, 4.5V
SIMULATION MODELS: RJP020N06 SPICE MODELRJP020N06 THERMAL MODEL
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: MPT3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.5V @ 1MA
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