CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6.5A (TA)
DETAILED DESCRIPTION: N-CHANNEL 20V 6.5A (TA) 700MW (TA) SURFACE MOUNT TSMT8
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.5V, 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORQ1C065UN ESD DATATSMT8-HF CONSTITUTION MATERIAL LIST
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 11NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 870PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RQ1C065UNTR
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: 8-SMD, FLAT LEAD
PACKAGING: REEL
POWER DISSIPATION (MAX): 700MW (TA)
RDS ON (MAX) @ ID, VGS: 22 MOHM @ 6.5A, 4.5V
SIMULATION MODELS: RQ1C065UN SPICE MODELRQ1C065UN THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TSMT8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 1V @ 1MA
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