CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  12A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 12A (TA) 2W (TA), 16W (TC) SURFACE MOUNT 8-HSMT (3.2X3)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOHSMT8-HF CONSTITUTION MATERIAL LISTRQ3E120GN ESD DATA

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  10NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  590PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RQ3E120GNTB

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA), 16W (TC)

RDS ON (MAX) @ ID, VGS:  8.8 MOHM @ 12A, 10V

SIMULATION MODELS:  RQ3E120GN SPICE MODELRQ3E120GN THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  8-HSMT (3.2X3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 1MA