RQ3E180GNTB

RQ3E180GNTB

N-CHANNEL 30V 18A (TA) 2W (TA) SURFACE MOUNT 8-HSMT (3.2X3)

Call for availability

Manufactured by:

ROHM SEMICONDUCTOR

Mfr Part#:  RQ3E180GNTB

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  8-HSMT (3.2X3)

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  18A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 18A (TA) 2W (TA) SURFACE MOUNT 8-HSMT (3.2X3)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOHSMT8-HF CONSTITUTION MATERIAL LIST

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  22.4NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1520PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  RQ3E180GNTB

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA)

RDS ON (MAX) @ ID, VGS:  4.3 MOHM @ 18A, 10V

SIMULATION MODELS:  RQ3E180GN SPICE MODELRQ3E180GN THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  8-HSMT (3.2X3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 1MA

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