RQ3E180GNTB
N-CHANNEL 30V 18A (TA) 2W (TA) SURFACE MOUNT 8-HSMT (3.2X3)Call for availability
Manufactured by:
Mfr Part#: RQ3E180GNTB
PACKAGE / CASE: 8-POWERVDFN
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 8-HSMT (3.2X3)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 18A (TA)
DETAILED DESCRIPTION: N-CHANNEL 30V 18A (TA) 2W (TA) SURFACE MOUNT 8-HSMT (3.2X3)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOHSMT8-HF CONSTITUTION MATERIAL LIST
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 22.4NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1520PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RQ3E180GNTB
MANUFACTURER STANDARD LEAD TIME: 40 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: 8-POWERVDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 2W (TA)
RDS ON (MAX) @ ID, VGS: 4.3 MOHM @ 18A, 10V
SIMULATION MODELS: RQ3E180GN SPICE MODELRQ3E180GN THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 8-HSMT (3.2X3)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 1MA
Related Products
MFR. Name: Vishay
MFR. Name: Vishay
MFR. Name: Microsemi
MFR. Name: Vishay
MFR. Name: Central Semiconductor Corp
MFR. Name: Infineon Technologies
Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .