Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2A (TA)
DETAILED DESCRIPTION: N-CHANNEL 30V 2A (TA) 600MW (TA) SURFACE MOUNT TSMT6 (SC-95)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4V, 10V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORSQ020N03 ESD DATATSMT6 CONSTITUTION MATERIAL LIST
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 3.1NC @ 5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 110PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RSQ020N03TR
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: SOT-23-6 THIN, TSOT-23-6
PACKAGING: REEL
POWER DISSIPATION (MAX): 600MW (TA)
RDS ON (MAX) @ ID, VGS: 134 MOHM @ 2A, 10V
SIMULATION MODELS: RSQ020N03 SPICE MODELRSQ020N03 THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TSMT6 (SC-95)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 1MA
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