CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.6A (TA)
DETAILED DESCRIPTION: N-CHANNEL 45V 1.6A (TA) 320MW (TA) SURFACE MOUNT TUMT3
DRAIN TO SOURCE VOLTAGE (VDSS): 45V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORTF016N05 ESD DATATUMT3 CONSTITUTION MATERIAL LIST
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 2.3NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 150PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RTF016N05TL
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: 3-SMD, FLAT LEADS
PACKAGING: REEL
POWER DISSIPATION (MAX): 320MW (TA)
RDS ON (MAX) @ ID, VGS: 190 MOHM @ 1.6A, 4.5V
SIMULATION MODELS: RTF016N05 SPICE MODELRTF016N05 THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TUMT3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.5V @ 1MA
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