CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.5A (TA)
DETAILED DESCRIPTION: N-CHANNEL 20V 1.5A (TA) 800MW (TA) SURFACE MOUNT TUMT3
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.8V, 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORUF015N02 ESD DATATUMT3 CONSTITUTION MATERIAL LIST
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 2.5NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 110PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RUF015N02TL
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: 3-SMD, FLAT LEADS
PACKAGING: REEL
POWER DISSIPATION (MAX): 800MW (TA)
RDS ON (MAX) @ ID, VGS: 180 MOHM @ 1.5A, 4.5V
SIMULATION MODELS: RUF015N02 SPICE MODELRUF015N02 THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TUMT3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 1V @ 1MA
Related Products
Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .