RUM002N05T2L
N-CHANNEL 50V 200MA (TA) 150MW (TA) SURFACE MOUNT VMT3Call for availability
Manufactured by:
Mfr Part#: RUM002N05T2L
PACKAGE / CASE: SOT-723
PACKAGING: REEL
STANDARD PACKAGE: 8,000
SUPPLIER DEVICE PACKAGE: VMT3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 200MA (TA)
DETAILED DESCRIPTION: N-CHANNEL 50V 200MA (TA) 150MW (TA) SURFACE MOUNT VMT3
DRAIN TO SOURCE VOLTAGE (VDSS): 50V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.2V, 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFORUM002N05 ESD DATAVMT3 CONSTITUTION MATERIAL LIST
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 25PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RUM002N05T2L
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: SOT-723
PACKAGING: REEL
POWER DISSIPATION (MAX): 150MW (TA)
RDS ON (MAX) @ ID, VGS: 2.2 OHM @ 200MA, 4.5V
SIMULATION MODELS: RUM002N05 SPICE MODELRUM002N05 THERMAL MODEL
STANDARD PACKAGE: 8,000
SUPPLIER DEVICE PACKAGE: VMT3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 1V @ 1MA
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