CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4A (TA)
DETAILED DESCRIPTION: N-CHANNEL 20V 4A (TA) 1W (TA) SURFACE MOUNT TSMT3
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.5V, 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOTSMT3 CONSTITUTION MATERIAL LISTRUR040N02 ESD DATA
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 8NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 680PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RUR040N02TL
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: SC-96
PACKAGING: REEL
POWER DISSIPATION (MAX): 1W (TA)
RDS ON (MAX) @ ID, VGS: 35 MOHM @ 4A, 4.5V
SIMULATION MODELS: RUR040N02 SPICE MODELRUR040N02 THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TSMT3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 1.3V @ 1MA
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