Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 200MA (TA)
DETAILED DESCRIPTION: N-CHANNEL 50V 200MA (TA) 350MW (TC) SURFACE MOUNT SST3
DRAIN TO SOURCE VOLTAGE (VDSS): 50V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOSST3 CONSTITUTION MATERIAL LISTRYC002N05 ESD DATA
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 26PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: RYC002N05T316
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 350MW (TC)
RDS ON (MAX) @ ID, VGS: 2.2 OHM @ 200MA, 4.5V
SIMULATION MODELS: RYC002N05 SPICE MODELRYC002N05 THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SST3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 800MV @ 1MA
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