SCT3030ALGC11
N-CHANNEL 650V 70A (TC) 262W (TC) THROUGH HOLE TO-247NCall for availability
Manufactured by:
Mfr Part#: SCT3030ALGC11
PACKAGE / CASE: TO-247-3
PACKAGING: TUBE
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: TO-247N
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 70A (TC)
DETAILED DESCRIPTION: N-CHANNEL 650V 70A (TC) 262W (TC) THROUGH HOLE TO-247N
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 18V
ENVIRONMENTAL INFORMATION: SIC LEVEL 1 MSLSIC WHISKER INFOTO-247N MOS CONSTITUTION MATERIAL LISTSCT3030AL ESD DATA
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 104NC @ 18V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1526PF @ 500V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: SCT3030ALGC11
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: 175°C (TJ)
PACKAGE / CASE: TO-247-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 262W (TC)
RDS ON (MAX) @ ID, VGS: 39 MOHM @ 27A, 18V
SIMULATION MODELS: SCT3030AL SPICE MODELSCT3030AL THERMAL MODEL
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: TO-247N
TECHNOLOGY: SICFET (SILICON CARBIDE)
VGS (MAX): +22V, -4V
VGS(TH) (MAX) @ ID: 5.6V @ 13.3MA
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