BASE PART NUMBER:  *MD5

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  68 @ 5MA, 5V / 30 @ 10MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW, 120MW SURFACE MOUNT UMT6

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOUMT6 CONSTITUTION MATERIAL LISTUMD5N ESD DATA

FREQUENCY - TRANSITION:  250MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  UMD5NTR

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

POWER - MAX:  150MW, 120MW

RESISTOR - BASE (R1):  47 KOHMS, 4.7 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS, 10 KOHMS

SIMULATION MODELS:  UMD5N SPICE MODELUMD5N THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  UMT6

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  300MV @ 500ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V