UMG3NTR
PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT UMT5Call for availability
Manufactured by:
Mfr Part#: UMG3NTR
PACKAGE / CASE: 5-TSSOP, SC-70-5, SOT-353
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: UMT5
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: *MG3
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 100 @ 1MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT UMT5
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOUMT5 CONSTITUTION MATERIAL LISTUMG3N ESD DATA
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: UMG3NTR
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: 5-TSSOP, SC-70-5, SOT-353
PACKAGING: REEL
POWER - MAX: 150MW
RESISTOR - BASE (R1): 4.7 KOHMS
SIMULATION MODELS: UMG3N SPICE MODELUMG3N THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: UMT5
TRANSISTOR TYPE: 2 NPN - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 150MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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