Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: *MH11
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 30 @ 5MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MHZ 150MW SURFACE MOUNT UMT6
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOUMT6 CONSTITUTION MATERIAL LISTUMH11N ESD DATA
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: UMH11NTN
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: 6-TSSOP, SC-88, SOT-363
PACKAGING: REEL
POWER - MAX: 150MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 10 KOHMS
SIMULATION MODELS: UMH11N SPICE MODELUMH11N THERMAL MODEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: UMT6
TRANSISTOR TYPE: 2 NPN - PRE-BIASED (DUAL)
VCE SATURATION (MAX) @ IB, IC: 300MV @ 500ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
ALTERNATE PARTS: PUMH4,115 BCR133SH6327XTSA1
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