ACCESS TIME-MAX:  125 PS

CLOCK FREQUENCY-MAX (FCLK):  667 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  4,8

JESD-30 CODE:  R-PBGA-B96

JESD-609 CODE:  E1

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4B1G1646E-HCH9

MEMORY DENSITY:  1.0737 GBIT

MEMORY IC TYPE:  DDR DRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  96

NUMBER OF WORDS:  67.1089 M

NUMBER OF WORDS CODE:  64000000

ORGANIZATION:  64MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  FBGA

PACKAGE DESCRIPTION:  FBGA, BGA96,9X16,32

PACKAGE EQUIVALENCE CODE:  BGA96,9X16,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  1.5 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  8192

SEQUENTIAL BURST LENGTH:  4,8

STANDBY CURRENT-MAX:  10 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  240 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  1.5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TERMINAL FINISH:  TIN/SILVER/COPPER (SN/AG/CU)

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED