ACCESS MODE:  DUAL BANK PAGE BURST

ACCESS TIME-MAX:  6.5 NS

ADDITIONAL FEATURE:  AUTO/SELF REFRESH

CLOCK FREQUENCY-MAX (FCLK):  125 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  4,8

JESD-30 CODE:  R-PQFP-G100

LENGTH:  20 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4G813222B-PC80

MEMORY DENSITY:  8.3886 MBIT

MEMORY IC TYPE:  SYNCHRONOUS GRAPHICS RAM

MEMORY WIDTH:  32

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  100

NUMBER OF WORDS:  262.144 K

NUMBER OF WORDS CODE:  256000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  256KX32

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  QFP

PACKAGE DESCRIPTION:  QFP, QFP100,.7X.9

PACKAGE EQUIVALENCE CODE:  QFP100,.7X.9

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLATPACK

PART PACKAGE CODE:  QFP

PEAK REFLOW TEMPERATURE (CEL):  225

PIN COUNT:  100

POWER SUPPLIES:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  1024

SEATED HEIGHT-MAX:  3 MM

SEQUENTIAL BURST LENGTH:  1,2,4,8,FP

STANDBY CURRENT-MAX:  2 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  280 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  3 V

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  650 ΜM

TERMINAL POSITION:  QUAD

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  14 MM