ACCESS MODE:  FOUR BANK PAGE BURST

ACCESS TIME-MAX:  750 PS

ADDITIONAL FEATURE:  AUTO/SELF REFRESH

CLOCK FREQUENCY-MAX (FCLK):  133 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  2,4,8

JESD-30 CODE:  R-PDSO-G66

JESD-609 CODE:  E0

LENGTH:  22.22 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4H281638E-TCB0

MEMORY DENSITY:  134.2177 MBIT

MEMORY IC TYPE:  DDR DRAM

MEMORY WIDTH:  16

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  66

NUMBER OF WORDS:  8.3886 M

NUMBER OF WORDS CODE:  8000000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  8MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP2

PACKAGE DESCRIPTION:  TSOP2, TSSOP66,.46

PACKAGE EQUIVALENCE CODE:  TSSOP66,.46

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PART PACKAGE CODE:  TSOP2

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  66

POWER SUPPLIES:  2.5 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  4096

SEATED HEIGHT-MAX:  1.2 MM

SEQUENTIAL BURST LENGTH:  2,4,8

STANDBY CURRENT-MAX:  3 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  365 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  2.7 V

SUPPLY VOLTAGE-MIN (VSUP):  2.3 V

SUPPLY VOLTAGE-NOM (VSUP):  2.5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  650 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  10.16 MM