ACCESS TIME-MAX:  650 PS

CLOCK FREQUENCY-MAX (FCLK):  200 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  2,4,8

JESD-30 CODE:  R-PDSO-G66

JESD-609 CODE:  E6

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4H561638H-UCCC

MEMORY DENSITY:  268.4355 MBIT

MEMORY IC TYPE:  DDR DRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  66

NUMBER OF WORDS:  16.7772 M

NUMBER OF WORDS CODE:  16000000

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  16MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSSOP

PACKAGE DESCRIPTION:  TSSOP, TSSOP66,.46

PACKAGE EQUIVALENCE CODE:  TSSOP66,.46

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  2.5 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  8192

SEQUENTIAL BURST LENGTH:  2,4,8

STANDBY CURRENT-MAX:  4 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  350 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  2.5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/BISMUTH (SN97BI3)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  635 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED