ACCESS TIME-MAX:  5.4 NS

CLOCK FREQUENCY-MAX (FCLK):  133 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  1,2,4,8

JESD-30 CODE:  S-PBGA-B54

JESD-609 CODE:  E3

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4M281633H-BN75

MEMORY DENSITY:  134.2177 MBIT

MEMORY IC TYPE:  SYNCHRONOUS DRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF TERMINALS:  54

NUMBER OF WORDS:  8.3886 M

NUMBER OF WORDS CODE:  8000000

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -25 °C

ORGANIZATION:  8MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  FBGA

PACKAGE DESCRIPTION:  FBGA, BGA54,9X9,32

PACKAGE EQUIVALENCE CODE:  BGA54,9X9,32

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  GRID ARRAY, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  225

POWER SUPPLIES:  3/3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  4096

SEQUENTIAL BURST LENGTH:  1,2,4,8,FP

STANDBY CURRENT-MAX:  500 ΜA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  70 ΜA

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  OTHER

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED