ACCESS TIME-MAX:  5.5 NS

CLOCK FREQUENCY-MAX (FCLK):  143 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  1,2,4,8

JESD-30 CODE:  R-PDSO-G86

JESD-609 CODE:  E0

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4S643232H-TC70

MEMORY DENSITY:  67.1089 MBIT

MEMORY IC TYPE:  SYNCHRONOUS DRAM

MEMORY WIDTH:  32

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  86

NUMBER OF WORDS:  2.0972 M

NUMBER OF WORDS CODE:  2000000

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  2MX32

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSSOP

PACKAGE DESCRIPTION:  TSSOP, TSSOP86,.46,20

PACKAGE EQUIVALENCE CODE:  TSSOP86,.46,20

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  4096

SEQUENTIAL BURST LENGTH:  1,2,4,8,FP

STANDBY CURRENT-MAX:  2 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  140 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  500 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40