ACCESS MODE:  MULTI BANK PAGE BURST

ACCESS TIME-MAX:  450 PS

ADDITIONAL FEATURE:  AUTO/SELF REFRESH

CLOCK FREQUENCY-MAX (FCLK):  333 MHZ

I/O TYPE:  COMMON

INTERLEAVED BURST LENGTH:  4,8

JESD-30 CODE:  R-PBGA-B84

JESD-609 CODE:  E1

LENGTH:  12.5 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K4T1G164QE-HCE6

MEMORY DENSITY:  1.0737 GBIT

MEMORY IC TYPE:  DDR DRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  84

NUMBER OF WORDS:  67.1089 M

NUMBER OF WORDS CODE:  64000000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  64MX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TFBGA

PACKAGE DESCRIPTION:  TFBGA, BGA84,9X15,32

PACKAGE EQUIVALENCE CODE:  BGA84,9X15,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, THIN PROFILE, FINE PITCH

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  1.8 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  8192

SEATED HEIGHT-MAX:  1.2 MM

SEQUENTIAL BURST LENGTH:  4,8

STANDBY CURRENT-MAX:  10 MA

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  185 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  1.9 V

SUPPLY VOLTAGE-MIN (VSUP):  1.7 V

SUPPLY VOLTAGE-NOM (VSUP):  1.8 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  OTHER

TERMINAL FINISH:  TIN/SILVER/COPPER (SN/AG/CU)

TERMINAL FORM:  BALL

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  7.5 MM