ACCESS TIME-MAX:  70 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PBGA-B48

JESD-609 CODE:  E0

LENGTH:  7 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6F1016U4C-EF70

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  16

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  48

NUMBER OF WORDS:  65.536 K

NUMBER OF WORDS CODE:  64000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  64KX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  VFBGA

PACKAGE DESCRIPTION:  VFBGA, BGA48,6X8,30

PACKAGE EQUIVALENCE CODE:  BGA48,6X8,30

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  BGA

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  48

POWER SUPPLIES:  3 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1 MM

STANDBY CURRENT-MAX:  5 ΜA

STANDBY VOLTAGE-MIN:  1.5 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  20 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.3 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  BALL

TERMINAL PITCH:  750 ΜM

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  6 MM