ACCESS TIME-MAX:  10 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDSO-G32

JESD-609 CODE:  E0

LENGTH:  20.95 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6R1008V1D-TC10

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  8

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  32

NUMBER OF WORDS:  131.072 K

NUMBER OF WORDS CODE:  128000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  128KX8

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP2

PACKAGE DESCRIPTION:  TSOP2, TSOP32,.46

PACKAGE EQUIVALENCE CODE:  TSOP32,.46

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  TSOP2

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  32

POWER SUPPLIES:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.2 MM

STANDBY CURRENT-MAX:  5 MA

STANDBY VOLTAGE-MIN:  3 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  65 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  3 V

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  1.27 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

WIDTH:  10.16 MM