ACCESS TIME-MAX:  10 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDSO-G44

JESD-609 CODE:  E6

LENGTH:  18.41 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6R4016C1D-UI10

MEMORY DENSITY:  4.1943 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  16

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  44

NUMBER OF WORDS:  262.144 K

NUMBER OF WORDS CODE:  256000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  256KX16

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP2

PACKAGE DESCRIPTION:  TSOP2, TSOP44,.46,32

PACKAGE EQUIVALENCE CODE:  TSOP44,.46,32

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL:  PARALLEL

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.2 MM

STANDBY CURRENT-MAX:  5 MA

STANDBY VOLTAGE-MIN:  4.5 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  75 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FINISH:  TIN/BISMUTH (SN97BI3)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  800 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

WIDTH:  10.16 MM