ACCESS TIME-MAX:  70 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDIP-T32

LENGTH:  41.91 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6T1008C2E-DB70

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  8

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  32

NUMBER OF WORDS:  131.072 K

NUMBER OF WORDS CODE:  128000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  128KX8

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  DIP

PACKAGE DESCRIPTION:  DIP, DIP32,.6

PACKAGE EQUIVALENCE CODE:  DIP32,.6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  DIP

PEAK REFLOW TEMPERATURE (CEL):  225

PIN COUNT:  32

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  5.08 MM

STANDBY VOLTAGE-MIN:  2 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  50 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  NO

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FORM:  THROUGH-HOLE

TERMINAL PITCH:  2.54 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  15.24 MM