ACCESS TIME-MAX:  55 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDSO-G32

JESD-609 CODE:  E0

LENGTH:  20.47 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6T1008C2E-GB55

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  8

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  32

NUMBER OF WORDS:  131.072 K

NUMBER OF WORDS CODE:  128000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  128KX8

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  SOP

PACKAGE DESCRIPTION:  SOP, SOP32,.56

PACKAGE EQUIVALENCE CODE:  SOP32,.56

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  SOIC

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  32

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  3 MM

STANDBY CURRENT-MAX:  10 ΜA

STANDBY VOLTAGE-MIN:  2 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  50 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  1.27 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  11.43 MM