ACCESS TIME-MAX:  70 NS

I/O TYPE:  COMMON

JESD-30 CODE:  R-PDSO-G32

JESD-609 CODE:  E0

LENGTH:  18.4 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K6X1008T2D-TF70

MEMORY DENSITY:  1.0486 MBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  8

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  32

NUMBER OF WORDS:  131.072 K

NUMBER OF WORDS CODE:  128000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  128KX8

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSOP1

PACKAGE DESCRIPTION:  TSOP1, TSSOP32,.8,20

PACKAGE EQUIVALENCE CODE:  TSSOP32,.8,20

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  TSOP1

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  32

POWER SUPPLIES:  3/3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.2 MM

STANDBY VOLTAGE-MIN:  2 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  20 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  2.7 V

SUPPLY VOLTAGE-NOM (VSUP):  3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  500 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  8 MM