ACCESS TIME-MAX:  20 NS

COMMAND USER INTERFACE:  YES

DATA POLLING:  NO

JESD-30 CODE:  R-PDSO-G48

JESD-609 CODE:  E6

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  K9F2G08U0A-PIB0

MEMORY DENSITY:  2.1475 GBIT

MEMORY IC TYPE:  FLASH

MEMORY WIDTH:  8

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF SECTORS/SIZE:  2K

NUMBER OF TERMINALS:  48

NUMBER OF WORDS:  268.4355 M

NUMBER OF WORDS CODE:  256000000

OPERATING TEMPERATURE-MAX:  85 °C

OPERATING TEMPERATURE-MIN:  -40 °C

ORGANIZATION:  256MX8

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  TSSOP

PACKAGE DESCRIPTION:  TSSOP, TSSOP48,.8,20

PACKAGE EQUIVALENCE CODE:  TSSOP48,.8,20

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PAGE SIZE:  2K WORDS

PARALLEL/SERIAL:  PARALLEL

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  3/3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

READY/BUSY:  YES

SECTOR SIZE:  128K

STANDBY CURRENT-MAX:  50 ΜA

SUBCATEGORY:  FLASH MEMORIES

SUPPLY CURRENT-MAX:  20 ΜA

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  INDUSTRIAL

TERMINAL FINISH:  TIN/BISMUTH (SN97BI3)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  500 ΜM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TOGGLE BIT:  NO

TYPE:  NAND TYPE