ACCESS TIME-MAX:  150 NS

I/O TYPE:  SEPARATE

JESD-30 CODE:  R-PDIP-T16

JESD-609 CODE:  E0

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  KM41256AP-15

MEMORY DENSITY:  262.144 KBIT

MEMORY IC TYPE:  PAGE MODE DRAM

MEMORY WIDTH:  1

MOISTURE SENSITIVITY LEVEL:  3

NUMBER OF TERMINALS:  16

NUMBER OF WORDS:  262.144 K

NUMBER OF WORDS CODE:  256000

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  256KX1

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  DIP

PACKAGE DESCRIPTION:  DIP, DIP16,.3

PACKAGE EQUIVALENCE CODE:  DIP16,.3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PBFREE CODE:  NO

PEAK REFLOW TEMPERATURE (CEL):  260

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

REFRESH CYCLES:  256

SUBCATEGORY:  DRAMS

SUPPLY CURRENT-MAX:  65 ΜA

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  NO

TECHNOLOGY:  MOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL PITCH:  2.54 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40