ACCESS TIME-MAX:  8 NS

ADDITIONAL FEATURE:  SELF TIMED WRITE CYCLE; BYTE WRITE

CLOCK FREQUENCY-MAX (FCLK):  100 MHZ

I/O TYPE:  COMMON

JESD-30 CODE:  R-PQFP-G100

JESD-609 CODE:  E0

LENGTH:  20 MM

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  KM736V787T-8

MEMORY DENSITY:  4.7186 MBIT

MEMORY IC TYPE:  CACHE SRAM

MEMORY WIDTH:  36

NUMBER OF FUNCTIONS:  1

NUMBER OF TERMINALS:  100

NUMBER OF WORDS:  131.072 K

NUMBER OF WORDS CODE:  128000

OPERATING MODE:  SYNCHRONOUS

OPERATING TEMPERATURE-MAX:  70 °C

OPERATING TEMPERATURE-MIN:  0 °C

ORGANIZATION:  128KX36

OUTPUT CHARACTERISTICS:  3-STATE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE CODE:  LQFP

PACKAGE DESCRIPTION:  LQFP, QFP100,.63X.87

PACKAGE EQUIVALENCE CODE:  QFP100,.63X.87

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLATPACK, LOW PROFILE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  QFP

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  100

POWER SUPPLIES:  3.3 V

QUALIFICATION STATUS:  NOT QUALIFIED

SEATED HEIGHT-MAX:  1.6 MM

STANDBY CURRENT-MAX:  20 MA

STANDBY VOLTAGE-MIN:  3.14 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  325 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  3.6 V

SUPPLY VOLTAGE-MIN (VSUP):  3.135 V

SUPPLY VOLTAGE-NOM (VSUP):  3.3 V

SURFACE MOUNT:  YES

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  COMMERCIAL

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL PITCH:  650 ΜM

TERMINAL POSITION:  QUAD

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

WIDTH:  14 MM