MN18R1628EF0-CT9

MN18R1628EF0-CT9

Call for availability

Manufactured by:

SAMSUNG

Mfr Part#:  MN18R1628EF0-CT9

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  ,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  MICROELECTRONIC ASSEMBLY

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ACCESS MODE:  BLOCK ORIENTED PROTOCOL

ADDITIONAL FEATURE:  SELF CONTAINED REFRESH

JESD-30 CODE:  R-XXMA-X200

MANUFACTURER:  SAMSUNG SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MN18R1628EF0-CT9

MEMORY DENSITY:  2.4159 GBIT

MEMORY IC TYPE:  RAMBUS DRAM MODULE

MEMORY WIDTH:  18

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  200

NUMBER OF WORDS:  134.2177 M

NUMBER OF WORDS CODE:  128000000

OPERATING MODE:  SYNCHRONOUS

ORGANIZATION:  128MX18

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  ,

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  MICROELECTRONIC ASSEMBLY

QUALIFICATION STATUS:  NOT QUALIFIED

SUPPLY VOLTAGE-MAX (VSUP):  2.63 V

SUPPLY VOLTAGE-MIN (VSUP):  2.37 V

SUPPLY VOLTAGE-NOM (VSUP):  2.5 V

SURFACE MOUNT:  NO

TERMINAL FORM:  UNSPECIFIED

TERMINAL POSITION:  UNSPECIFIED

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