CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  900 V

DRAIN CURRENT-MAX (ABS) (ID):  8 A

DRAIN CURRENT-MAX (ID):  8 A

DRAIN-SOURCE ON RESISTANCE-MAX:  1.6 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PSFM-T3

MANUFACTURER:  SANYO ELECTRIC CO LTD

MANUFACTURER PART NUMBER:  2SK1462

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  TO-3PB

PIN COUNT:  2

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION AMBIENT-MAX:  150 W

POWER DISSIPATION-MAX (ABS):  2.5 W

PULSED DRAIN CURRENT-MAX (IDM):  16 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON