ADDITIONAL FEATURE:  BUILT-IN BIAS RESISTOR RATIO IS 1

COLLECTOR CURRENT-MAX (IC):  500 MA

COLLECTOR-EMITTER VOLTAGE-MAX:  50 V

CONFIGURATION:  SINGLE WITH BUILT-IN RESISTOR

DC CURRENT GAIN-MIN (HFE):  60

JESD-30 CODE:  R-PDSO-G3

MANUFACTURER:  SIEMENS

MANUFACTURER PART NUMBER:  BCR512-E6327

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  NPN

POWER DISSIPATION AMBIENT-MAX:  330 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON

TRANSITION FREQUENCY-NOM (FT):  100 MHZ

VCESAT-MAX:  300 MV