ARS35G

ARS35G

O-PEDB-N2

Call for availability

Manufactured by:

TAIWAN SEMICONDUCTOR

Mfr Part#:  ARS35G

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  O-PEDB-N2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  DISK BUTTON

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ADDITIONAL FEATURE:  LOW LEAKAGE CURRENT

APPLICATION:  GENERAL PURPOSE

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  RECTIFIER DIODE

FORWARD VOLTAGE-MAX (VF):  1 V

JESD-30 CODE:  O-PEDB-N2

JESD-609 CODE:  E3

MANUFACTURER:  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

MANUFACTURER PART NUMBER:  ARS35G

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PK FORWARD CURRENT-MAX:  500 A

NUMBER OF ELEMENTS:  1

NUMBER OF PHASES:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  175 °C

OPERATING TEMPERATURE-MIN:  -50 °C

OUTPUT CURRENT-MAX:  35 A

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  O-PEDB-N2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  DISK BUTTON

PIN COUNT:  2

QUALIFICATION STATUS:  NOT QUALIFIED

REP PK REVERSE VOLTAGE-MAX:  400 V

REVERSE RECOVERY TIME-MAX:  3 ΜS

SUBCATEGORY:  RECTIFIER DIODES

SURFACE MOUNT:  YES

TERMINAL FINISH:  PURE TIN

TERMINAL FORM:  NO LEAD

TERMINAL POSITION:  END

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