SMBJ28AR5

SMBJ28AR5

R-PDSO-C2

Call for availability

Manufactured by:

TAIWAN SEMICONDUCTOR

Mfr Part#:  SMBJ28AR5

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-C2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ADDITIONAL FEATURE:  EXCELLENT CLAMPING CAPABILITY

BREAKDOWN VOLTAGE-MAX:  34.4 V

BREAKDOWN VOLTAGE-MIN:  31.1 V

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  TRANS VOLTAGE SUPPRESSOR DIODE

JEDEC-95 CODE:  DO-214AA

JESD-30 CODE:  R-PDSO-C2

JESD-609 CODE:  E3

MANUFACTURER:  TAIWAN SEMICONDUCTOR

MANUFACTURER PART NUMBER:  SMBJ28AR5

MOISTURE SENSITIVITY LEVEL:  NOT SPECIFIED

NON-REP PEAK REV POWER DIS-MAX:  600 W

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

OPERATING TEMPERATURE-MIN:  -55 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-C2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  3 W

REP PK REVERSE VOLTAGE-MAX:  28 V

SURFACE MOUNT:  YES

TECHNOLOGY:  AVALANCHE

TERMINAL FINISH:  PURE TIN

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

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