CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  21A (TA), 60A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 25V 21A (TA), 60A (TC) 3W (TA) SURFACE MOUNT 8-VSON-CLIP (3.3X3.3)

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  3V, 8V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  8.4NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1300PF @ 12.5V

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD16323Q3

MANUFACTURER STANDARD LEAD TIME:  35 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3W (TA)

RDS ON (MAX) @ ID, VGS:  4.5 MOHM @ 24A, 8V

SERIES:  NEXFET?

SUPPLIER DEVICE PACKAGE:  8-VSON-CLIP (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  +10V, -8V

VGS(TH) (MAX) @ ID:  1.4V @ 250ΜA