Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 50A (TA)
DETAILED DESCRIPTION: N-CHANNEL 100V 50A (TA) 2.8W (TA), 83W (TC) SURFACE MOUNT 8-VSON (3.3X3.3)
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 6V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 21NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1680PF @ 50V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS COMPLIANT
MANUFACTURER: TEXAS INSTRUMENTS
MANUFACTURER PART NUMBER: CSD19537Q3
MANUFACTURER PRODUCT PAGE: CSD19537Q3 SPECIFICATIONS
MANUFACTURER STANDARD LEAD TIME: 25 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERVDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.8W (TA), 83W (TC)
RDS ON (MAX) @ ID, VGS: 14.5 MOHM @ 10A, 10V
SERIES: NEXFET?
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-VSON (3.3X3.3)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3.6V @ 250ΜA
ALTERNATE PARTS: CSD19537Q3T
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