CSD25213W10
P-CHANNEL 20V 1.6A (TA) 1W (TA) SURFACE MOUNT 4-DSBGA (1X1)Call for availability
Manufactured by:
Mfr Part#: CSD25213W10
PACKAGE / CASE: 4-UFBGA, DSBGA
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-DSBGA (1X1)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.6A (TA)
DETAILED DESCRIPTION: P-CHANNEL 20V 1.6A (TA) 1W (TA) SURFACE MOUNT 4-DSBGA (1X1)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 2.9NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 478PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: TEXAS INSTRUMENTS
MANUFACTURER PART NUMBER: CSD25213W10
MANUFACTURER PRODUCT PAGE: CSD25213W10 SPECIFICATIONS
MANUFACTURER STANDARD LEAD TIME: 21 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 4-UFBGA, DSBGA
PACKAGING: REEL
POWER DISSIPATION (MAX): 1W (TA)
RDS ON (MAX) @ ID, VGS: 47 MOHM @ 1A, 4.5V
SERIES: NEXFET?
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-DSBGA (1X1)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): -6V
VGS(TH) (MAX) @ ID: 1.1V @ 250ΜA
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