CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  40A

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (HALF BRIDGE)

GATE CHARGE (QG) (MAX) @ VGS:  10.7NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1870PF @ 12.5V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS COMPLIANT

MANUFACTURER:  TEXAS INSTRUMENTS

MANUFACTURER PART NUMBER:  CSD86350Q5D

MANUFACTURER PRODUCT PAGE:  CSD86350Q5D SPECIFICATIONS

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERLDFN

PACKAGING:  REEL

POWER - MAX:  13W

RDS ON (MAX) @ ID, VGS:  6 MOHM @ 20A, 8V

SERIES:  NEXFET?

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  8-LSON (5X6)

VGS(TH) (MAX) @ ID:  2.1V @ 250ΜA