TPS1101DR
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Manufactured by:
Mfr Part#: TPS1101DR
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SOIC
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2.3A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 15V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 11.25NC @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: TEXAS INSTRUMENTS
MANUFACTURER PART NUMBER: TPS1101DR
MANUFACTURER PRODUCT PAGE: TPS1101DR SPECIFICATIONS
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -40°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER DISSIPATION (MAX): 791MW (TA)
RDS ON (MAX) @ ID, VGS: 90 MOHM @ 2.5A, 10V
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SOIC
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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