2N6660-E3
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Manufactured by:
Mfr Part#: 2N6660-E3
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: TUBE
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: TO-205AF (TO-39)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 990MA (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
INPUT CAPACITANCE (CISS) @ VDS: 50PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: 2N6660-E3
MANUFACTURER STANDARD LEAD TIME: 9 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: TUBE
POWER - MAX: 725MW
RDS ON (MAX) @ ID, VGS: 3 OHM @ 1A, 10V
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: TO-205AF (TO-39)
VGS(TH) (MAX) @ ID: 2V @ 1MA
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