Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 240MA (TA)
DETAILED DESCRIPTION: N-CHANNEL 60V 240MA (TA) 350MW (TA) SURFACE MOUNT TO-236
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 0.6NC @ 4.5V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 21PF @ 5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: 2N7002E-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 22 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 350MW (TA)
RDS ON (MAX) @ ID, VGS: 3 OHM @ 250MA, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA
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