ADDITIONAL FEATURE: LOW DISTORTION
APPLICATION: ATTENUATOR; SWITCHING
BREAKDOWN VOLTAGE-MIN: 100 V
CONFIGURATION: COMMON CATHODE, 2 ELEMENTS
DIODE CAPACITANCE-MAX: 0.5 PF
DIODE CAPACITANCE-NOM: 0.23 PF
DIODE ELEMENT MATERIAL: SILICON
DIODE FORWARD RESISTANCE-MAX: 20 O
DIODE RES TEST CURRENT: 1 MA
DIODE RES TEST FREQUENCY: 100 MHZ
DIODE TYPE: PIN DIODE
FREQUENCY BAND: S BAND
JESD-30 CODE: R-PDSO-G3
JESD-609 CODE: E3
MANUFACTURER: VISHAY SEMICONDUCTORS
MANUFACTURER PART NUMBER: BAR64V-05W-GS08
MINORITY CARRIER LIFETIME-NOM: 1.8 ΜS
MOISTURE SENSITIVITY LEVEL: 1
NUMBER OF ELEMENTS: 2
NUMBER OF TERMINALS: 3
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: R-PDSO-G3
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PBFREE CODE: YES
PEAK REFLOW TEMPERATURE (CEL): NOT SPECIFIED
PIN COUNT: 3
QUALIFICATION STATUS: NOT QUALIFIED
REVERSE TEST VOLTAGE: 20 V
SUBCATEGORY: PIN DIODES
SURFACE MOUNT: YES
TECHNOLOGY: POSITIVE-INTRINSIC-NEGATIVE
TERMINAL FINISH: MATTE TIN
TERMINAL FORM: GULL WING
TERMINAL POSITION: DUAL
TIME@PEAK REFLOW TEMPERATURE-MAX (S): NOT SPECIFIED
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