BZT52B2V7-V-GS18

BZT52B2V7-V-GS18

R-PDSO-G2

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  BZT52B2V7-V-GS18

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  ZENER DIODE

DYNAMIC IMPEDANCE-MAX:  500 O

JESD-30 CODE:  R-PDSO-G2

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BZT52B2V7-V-GS18

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  2

POLARITY:  UNIDIRECTIONAL

POWER DISSIPATION (MAX):  410 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REFERENCE VOLTAGE-NOM:  2.7 V

SUBCATEGORY:  VOLTAGE REFERENCE DIODES

SURFACE MOUNT:  YES

TECHNOLOGY:  ZENER

TERMINAL FINISH:  MATTE TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  10

VOLTAGE TOL-MAX:  1.85 %

WORKING TEST CURRENT:  5 MA

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