CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 18A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 70NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 1300PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRF640S
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: TUBE
POWER - MAX: 130W
RDS ON (MAX) @ ID, VGS: 180 MOHM @ 11A, 10V
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: D2PAK
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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