IRF840STRLPBF
N-CHANNEL 500V 8A (TC) 3.1W (TA), 125W (TC) SURFACE MOUNT D2PAKCall for availability
Manufactured by:
Mfr Part#: IRF840STRLPBF
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: D2PAK
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 8A (TC)
DETAILED DESCRIPTION: N-CHANNEL 500V 8A (TC) 3.1W (TA), 125W (TC) SURFACE MOUNT D2PAK
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 63NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1300PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRF840STRLPBF
MANUFACTURER STANDARD LEAD TIME: 11 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
POWER DISSIPATION (MAX): 3.1W (TA), 125W (TC)
RDS ON (MAX) @ ID, VGS: 850 MOHM @ 4.8A, 10V
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: D2PAK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
ALTERNATE PARTS: IRF840SPBF IRF840STRRPBF
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