CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 200V 11A (TC) 3W (TA), 125W (TC) SURFACE MOUNT D2PAK

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  44NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1200PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  IRF9640SPBF

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  3W (TA), 125W (TC)

RDS ON (MAX) @ ID, VGS:  500 MOHM @ 6.6A, 10V

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  D2PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA

ALTERNATE PARTS:  IRF9640STRRPBF IRF9640STRRPBF