CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 6.2A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) @ VGS: 42NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 1036PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRFBC40APBF
MANUFACTURER STANDARD LEAD TIME: 11 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 125W (TC)
RDS ON (MAX) @ ID, VGS: 1.2 OHM @ 3.7A, 10V
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220AB
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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