IRFBE30PBF
N-CHANNEL 800V 4.1A (TC) 125W (TC) THROUGH HOLE TO-220ABCall for availability
Manufactured by:
Mfr Part#: IRFBE30PBF
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220AB
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.1A (TC)
DETAILED DESCRIPTION: N-CHANNEL 800V 4.1A (TC) 125W (TC) THROUGH HOLE TO-220AB
DRAIN TO SOURCE VOLTAGE (VDSS): 800V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 78NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1300PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRFBE30PBF
MANUFACTURER STANDARD LEAD TIME: 18 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 125W (TC)
RDS ON (MAX) @ ID, VGS: 3 OHM @ 2.5A, 10V
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220AB
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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