IRFI640G
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Manufactured by:
Mfr Part#: IRFI640G
PACKAGE / CASE: TO-220-3 FULL PACK, ISOLATED TAB
PACKAGING: TUBE
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 9.8A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 70NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1300PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: IRFI640G
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3 FULL PACK, ISOLATED TAB
PACKAGING: TUBE
POWER DISSIPATION (MAX): 40W (TC)
RDS ON (MAX) @ ID, VGS: 180 MOHM @ 5.9A, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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